Methods for forming passivated semiconductor nanoparticles

ABSTRACT

Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

RELATED APPLICATION(S)

The present application is a divisional application of U.S. applicationSer. No. 11/373,696, filed Mar. 10, 2006 now U.S. Pat. No. 7,553,545,which is a divisional application of U.S. application Ser. No.10/616,147, filed Jul. 8, 2003. The present application may be relatedto U.S. Pat. No. 7,078,276, entitled “Nanoparticles and Method forMaking the Same,” which is incorporated herein by reference in itsentirety.

FIELD OF THE INVENTION

The present invention generally relates to the field of semiconductingfilms. More specifically, embodiments of the present invention pertainto compositions and methods for forming a patterned semiconductor and/orsemiconducting thin film and to patterned structures including such afilm.

SUMMARY OF THE INVENTION

Embodiments of the present invention relate to semiconducting thin filmstructures and to compositions and methods for making semiconductorand/or semiconducting thin films. The compositions generally comprise(a) passivated semiconductor nanoparticles; and at least one of (b) afirst cyclic Group IVA compound of the formula (1):(AH_(x))_(n)  (1)where n is from 3 to 12, 1≦x≦2 and each A in formula (1) isindependently Si or Ge; and (c) a second cyclic Group IVA compound ofthe formula (2):(AH_(x))_(m)(AH_(y)R_(z-y))_(p)(ZR′_(w))_(q),  (2)where (m+p+q) is from 3 to 12, 0≦x≦2, 0≦(y, z)≦2 and 1≦(y+z)≦2, 0≦w≦1,at least one of p and q is at least 1 such that when p is at least 1,(z-y) is at least 1, each A in formula (2) is independently Si or Ge, Zis B, P or As, R′ is R or H, and each R in formula (2) is independentlyalkyl, aryl, aralkyl, a halogen, BH_(s)R″_(2-s), PH_(s)R″_(2-s),AsH_(s)R″_(2-s), or AH_(t)R″_(3-t), where s is 0 to 2, t is 0 to 3, andR″ is alkyl, aryl, aralkyl, a halogen, or AH₃, where A is as definedabove.

The compositions may further comprise a solvent in which the abovenanoparticles and compounds are soluble. The method of forming apatterned semiconductor thin film generally comprises the steps of (i)printing a semiconductor thin film composition in a pattern on asubstrate, and (ii) curing the patterned semiconductor thin filmcomposition. In the method, the semiconductor thin film compositiongenerally comprises at least one of the first and second cyclic GroupIVA compounds of the formulas (1) and (2) above. In an alternativeembodiment, the method comprises (i) at least partially curing a thinfilm composition comprising semiconductor nanoparticles to form asemiconductor thin film lattice, (ii) coating the semiconductor thinfilm lattice with a composition comprising at least one cyclic Group IVAcompound of the formula (1) and/or the formula (2), and (iii) curing thecoated thin film lattice to form a semiconducting thin film. In afurther alternative, the method comprises (i) at least partially curinga thin film composition comprising at least one cyclic Group IVAcompound of the formula (1) and/or the formula (2), (ii) coating the(partially) cured thin film composition with an ink comprisingsemiconductor nanoparticles, and (iii) curing the coated, (partially)cured thin film composition to form a semiconducting thin film.

The structures generally comprise a pattern of semiconducting materialon a substrate, the semiconducting material having improved electricalproperties (e.g., conductivity/resistivity, resistance toelectromigration, step coverage and/or uniformity), relative tostructures made without either the present passivated nanoparticles orthe mixture of compounds of the formulas (1) and (2). The semiconductingmaterial generally comprises hydrogenated amorphous silicon and/orgermanium (e.g., from curing and/or sintering the compounds of theformulas (1) and/or (2)) and/or polycrystalline silicon and/or germanium(e.g., a number of separate crystalline regions and/or phases of siliconand/or germanium from corresponding nanocrystals thereof). In preferredembodiments, the structure may be formed from the present compositionand/or ink, and/or by the present method, as described herein.

The present invention advantageously provides printed thin filmstructures having improved physical and/or electrical properties (e.g.,conductivity, density, adhesion and/or carrier mobility), relative tostructures made from a nanoparticle ink without the compounds of theformulas (1) and (2). Printing a semiconductor thin film formsstructures such as the present patterned thin film structure in minutes,rather than hours or days as with conventional photolithographicsemiconductor processing. The present composition advantageouslyprovides semiconducting thin film structures having qualities suitablefor use in electronics applications, such as display devices or RF IDtags, while enabling high-throughput printing processes to be used formanufacturing such electronic devices.

These and other advantages of the present invention will become readilyapparent from the detailed description of preferred embodiments below.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-B show embodiments of a substrate having a number of printingfields thereon.

FIGS. 2A-B are cross-sectional views of an embodiment for making asemiconducting thin film structure according to the present invention.

FIG. 3 is a top view of one embodiment of the semiconducting thin filmstructure of FIG. 2.

FIG. 4 is a top view of a second embodiment of the semiconducting thinfilm structure of FIG. 2.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference will now be made in detail to the preferred embodiments of theinvention, examples of which are illustrated in the accompanyingdrawings. While the invention will be described in conjunction with thepreferred embodiments, it will be understood that they are not intendedto limit the invention to these embodiments. On the contrary, theinvention is intended to cover alternatives, modifications andequivalents, which may be included within the spirit and scope of theinvention as defined by the appended claims. Furthermore, in thefollowing detailed description of the present invention, numerousspecific details are set forth in order to provide a thoroughunderstanding of the present invention. However, it will be readilyapparent to one skilled in the art that the present invention may bepracticed without these specific details. In other instances, well-knownmethods, procedures, components, and circuits have not been described indetail so as not to unnecessarily obscure aspects of the presentinvention.

The present invention concerns a composition for making semiconductorand/or semiconducting thin films, comprising (a) passivatedsemiconductor nanoparticles; and at least one of (b) a first cyclicGroup IVA compound of the formula (1):(AH_(x))_(n)  (1)where n is from 3 to 12, 1≦x≦2, and each A in formula (1) isindependently Si or Ge; and (c) a second cyclic Group IVA compound ofthe formula (2):(AH_(x))_(m)(AH_(y)R_(z-y))_(p)(ZR′_(w))_(q),  (2)where (m+p+q) is from 3 to 12, 0≦x≦2, 0≦(y, z)≦2 and 1≦(y+z)≦2, 0≦w≦1,at least one of p and q is at least 1 such that when p is at least 1,(z-y) is at least 1, each A in formula (2) is independently Si or Ge, Zis B, P or As, R′ is R or H, and R in formula (2) is independentlyalkyl, aryl, aralkyl, a halogen, BH_(s)R″_(2-s), PH_(s)R″_(2-s),AsH_(s)R″_(2-s), or AH_(t)R″_(3-t), where s is 0 to 2, t is 0 to 3, andR″ is alkyl, aryl, aralkyl, a halogen, or AH₃ where A is as definedabove.

A further aspect of the invention concerns an ink for printing asemiconductor and/or semiconducting thin film, including the inventivecomposition described herein and a solvent in which the composition issoluble. The ink may further comprise a surface tension reducing agent,a surfactant, a binder and/or a thickening agent, but may advantageouslyomit such additives or agents.

An even further aspect of the invention concerns a method of making apatterned semiconducting film, comprising the steps of: (a) printing acomposition comprising at least one cyclic Group IVA compound of theformulas (1) and (2) above in a pattern on a substrate; and (b) curingthe composition to form the patterned semiconducting film. Curing isgenerally conducted under conditions sufficient to form a doped orundoped polysilane, polygermane or germanium-substituted polysilanehaving a molecular weight sufficiently high and/or a chemicalcomposition sufficiently insoluble to resist subsequent treatment withprocessing solvents (e.g., in subsequent cleaning and/or developmentsteps). The composition to be printed may further comprise semiconductornanoparticles, in which case curing may be conducted under conditionssufficient to form a hydrogenated, at least partially amorphous GroupIVA element thin film structure. Printing may comprise nearly any knownprinting process or technique (e.g., embossing, stamping, stenciling,inkjet printing, screen printing, flexographic printing, offsetlithography, gravure printing, selectively irradiating portions of thecomposition forming the pattern, etc.). Alternative embodiments involveseparately depositing and/or curing one of (i) a cyclic Group IVAcompound (or mixture thereof) or (ii) a silicon nanoparticle-containingink, then depositing the other thereon and curing the resultantstructure to form a semiconducting thin film, either as a printedpattern or a coherent thin film.

A still further aspect of the invention relates to a semiconducting thinfilm structure comprising a pattern of semiconducting material on asubstrate, the semiconducting material comprising a hydrogenatedamorphous Group IVA element, the Group IVA element comprising at leastone of silicon and germanium, the semiconducting material havingimproved conductivity, density, adhesion and/or carrier mobilityrelative to an otherwise identical structure made by an identicalprocess, but without either the passivated semiconductor nanoparticlesor the mixture of first and second cyclic Group IVA compounds. Inpreferred embodiments, the structure may be formed by the present methodas described herein.

The invention, in its various aspects, will be explained in greaterdetail below with regard to exemplary embodiments.

Exemplary Compositions

In one aspect, the present invention relates to a composition forforming semiconductor and/or semiconducting thin films, particularlypatterned semiconducting thin films, and more particularly patternedsilicon thin films. The composition generally comprises (a) passivatedsemiconductor nanoparticles; and at least one of (b) a first cyclicGroup IVA compound of the formula (1) above and (c) a second cyclicGroup IVA compound of the formula (2) above. In preferred embodiments,the formula (1) has the formula (3):(AH₂)_(n)  (3)and/or the second cyclic Group IVA compound of the formula (2) has theformula (4):(AH₂)_(m)(AHR)_(p)(ZR′)_(q).  (4)where n, m, p, q, R and R′ are as described above.

In the compound of formula (1), each A in the formula is independentlySi or Ge. Examples of suitable first cyclic Group IVA compounds can befound in U.S. Pat. Nos. 6,541,354, 6,527,847, 6,518,087, 6,514,801,6,503,570, 5,866,471 and 4,683,145, and in U.S. Patent ApplicationPublication 2003/0045632, the relevant portions of each of which areincorporated herein by reference, and include c-(SiH₂)₃, c-(SiH₂)₄,c-(SiH₂)₅, c-(SiH₂)₆, c-(SiH₂)₇, c-(SiH₂)₈, tetracyclo-(SiH)₄,pentacyclo-(SiH)₆, hexacyclo-(SiH)₈, c-(SiH₂)₄(GeH₂), c-(SiH₂)₅(GeH₂),c-(SiH₂)₃(GeH₂)₂, c-(SiH₂)₄(GeH₂)₂, c-(SiH₂)₂(GeH₂)₃, c-(SiH₂)(GeH₂)₄,c-(GeH₂)₅, and mixtures thereof. Furthermore, in the compound of theformula (1), n is from 3 to 12, but is preferably 5 or 6. In otherpreferred embodiments, each A is Si. In one particularly preferredembodiment, n is 5, x is 2 and A is Si.

For example, the present composition may include a mixture of about 50mol % c-(SiH₂)₅ and about 50 mol % c-(SiH₂)₄(GeH₂) to provide apoly(germa)silane having a Si:Ge molar ratio of about 90:10 (dependingon the amount and chemical identity of the compound of formula (2)) anda final amorphous semiconducting Si—Ge thin film structure having a Gelevel between 1 and 10 mol %.

Similarly, in the compounds of the formulas (2) and/or (4), each A isindependently Si or Ge. In preferred embodiments, each A is Si. Alsosimilarly to formula (1), the sum of (m+p+q) is from 3 to 8, but ispreferably 5 or 6. In one preferred embodiment, the sum of (m+p+q) is 5.At least one of p and q is at least 1, and preferably, p is 1 and q is0. Furthermore, each R in the formula is alkyl, aryl, aralkyl, ahalogen, BH_(s)R″_(2-s), PH_(s)R″_(2-s), AsH_(s)R″_(2-s), orAH_(t)R″_(3-t), where s is 0 to 2, t is 0 to 3, and R″ is alkyl, aryl,aralkyl, a halogen, or AH₃. Preferably, when q is 0, R isAH_(t)R″_(3-t), and t is 3. Alternatively, when a p-doped semiconductorthin film structure is formed and/or desired, q is 1, Z is B and R′ ishydrogen, alkyl, aryl or SiH₃; and when an n-doped semiconductor thinfilm structure is formed and/or desired, q is 1, Z is P or As, and R′ ishydrogen, alkyl, aryl or SiH₃. However, most preferably, at least somepart or portion of the compounds of formulas (2) and/or (4) willcomprise a cyclic Group IVA compound in which R is SiH₃.

The compounds of the formulas (1) and (2) are made by conventionalmethods, such as those described in, e.g., U.S. Pat. Nos. 4,554,180,4,683,145, 4,820,788 and 6,503,570, and in, e.g., Kumada, J. Organomet.Chem., 100 (1975) 127-138, Ishikawa et al., Chem. Commun., (1969) 567,Hengge et al., J. Organomet. Chem., 212 (1981) 155-161, Hengge et al.,Z. Anorg. Allg. Chem., 459 (1979) 123-130, and Hengge et al.,Monatshefte für Chem., 106 (1975) 503-512, the relevant portions ofwhich are incorporated herein by reference. Furthermore, the methodsdisclosed in any one of these references may be modified as suggestedand/or disclosed in another of these references. However, the preferredmethod comprises reducing and oligomerizing AR⁷ ₂X₂ (where R⁷ is, e.g.,phenyl or methyl), followed by treatment with a mixture of a Lewis acidand a hydrogen halide, such as AlCl₃ and HCl gas, then reduction withlithium aluminum hydride (optionally, in the presence of silica gel) toform a mixture of c-(AH₂)₅ and c-(AH₂)₄(AH(AH₃)) (see, e.g., U.S. Pat.No. 6,503,570 and Hengge et al., Monatshefte für Chem., 106 (1975)503-512). The added advantage of the preferred method is the formationof c-(AH₂)₄(AH(AH₃)) as a by-product. These methods are also generallyeffective for making compounds of the formula (2) where q is at least 1,or where R or R′ is BH_(s)R″_(2-s), PH_(s)R″_(2-s), or AsH_(s)R″_(2-s).

In the present composition, the passivated semiconductor nanoparticlesgenerally comprise semiconductor nanoparticles and a passivation layerthereon. The nanoparticles may include amorphous and/or crystallineparticles. The passivation layer may be chemically bound to thesemiconductor nanoparticles by covalent bonds (e.g., a directsilicon-hydrogen, silicon-oxygen or silicon-carbon bond), bycoordination bonds, by hydrogen-bonding, by Van der Waals forces and/orby ionic bonds. In preferred embodiments, the semiconductornanoparticles comprise silicon, germanium or SiGe nanoparticles, whichmay be doped or undoped (e.g., intrinsic). Doped nanoparticles aredescribed in U.S. Pat. Nos. 6,200,508 and 6,072,716, both to Jacobson etal., the relevant portions of which are incorporated herein byreference. Preferably, the passivation layer comprises one or more ofthe following: (i) an alcohol and/or alcoholate; (ii) a thiol and/orthiolate; (iii) an AR′₃ group, where A and R′ are as described above;(iv) an alkyl, aryl and/or aralkyl group; (v) hydrogen; (vi) a halogen,such as F, Cl, Br, and/or I; and/or (vii) a surfactant, such as anamine, an amine oxide, a quaternary ammonium salt, a betaine, asulfobetaine, an ether, a polyglycol, a polyether, a polymer, an organicester, a phosphine, a phosphate, a sulfonic acid, a sulfonate, asulfate, a ketone, and/or a silicone. More preferred passivationcomprises (i) an alcohol and/or alcoholate; (ii) a thiol and/orthiolate; or (iii) an AR′₃ group, where A and R′ are as described above.Exemplary semiconductor nanoparticles are described in U.S. Pat. No.7,078,276, entitled “Nanoparticles and Method for Making the Same,”which is incorporated herein by reference in its entirety.

In preferred embodiments, the alcohol and/or alcoholate may comprise aC₄-C₂₀, branched or unbranched, saturated or unsaturated aliphaticalcohol or salt thereof (such as butanol, hexanol, octanol, decanol,dodecanol, tetradecanol, hexadecanol, 2-butenol, 3-butenol, 2-hexenol,4-hexenol, 5-hexenol, 2-octenol, 6-octenol, 7-octenol, 2-decenol,9-decenol, 10-decenol, 2-dodecenol, 11-dodecenol, 2-tetradecenol,13-tetradecenol, 2-hexadecenol, 15-hexadecenol, oleyl alcohol, linoleylalcohol, linolenyl alcohol, elaidyl alcohol, behenyl alcohol,eleostearyl alcohol and/or arachidonyl alcohol); or a C₇-C₁₇, branchedor unbranched, substituted or unsubstituted aralkanol or salt thereof(such as benzyl alcohol, C₁-C₆ alkyl-substituted benzyl alcohol, or asalt thereof). Polyols, such as long-chain alkanediols (e.g.,1,7-octanediol, 1,12-dodecanediol), in an amount of, e.g., 1-10 mol %may cross-link two or more silicon nanoparticles. Similarly, thepreferred thiol and/or thiolate may comprise a C₄-C₂₀, branched orunbranched, saturated or unsaturated aliphatic thiol or salt thereof(such as butanethiol, hexanethiol, octanethiol, decanethiol,dodecanethiol, tetradecanethiol, hexadecanethiol, 2-butenethiol,3-butenethiol, 2-hexenethiol, 4-hexenethiol, 5-hexenethiol,2-octenethiol, 6-octenethiol, 7-octenethiol, 2-decenethiol,9-decenethiol, 10-decenethiol, 2-dodecenethiol, 11-dodecenethiol,2-tetradecenethiol, 13-tetradecenethiol, 2-hexadecenethiol and/or15-hexadecenethiol); or a C₇-C₁₇, branched or unbranched, substituted orunsubstituted aralkanethiol or salt thereof (such as benzyl mercaptan,C₁-C₆ alkyl-substituted benzyl mercaptan, or a salt thereof).Unsaturated alcohols and/or thiols, particularly long-chain (e.g.,C₈-C₂₀) unsaturated alcohols and/or thiols, may provide a mechanism ormeans by which passivated nanoparticles can be crosslinked withultraviolet radiation. When such nanoparticles are selectivelyirradiated with an appropriate wavelength of UV light (e.g., through amask), portions of the nanoparticle-containing composition may becrosslinked, while non-irradiated portions are not. These non-irradiatedportions may then be removed with an appropriate solvent (e.g., see thediscussion relating to “Exemplary Methods” below) to leave a patternedcomposition on the substrate.

The surfactant in preferred embodiments of the present composition maycomprise a tri-C₁-C₂₀ alkyl-substituted amine, a tri-C₁-C₂₀alkyl-substituted amine oxide, a tetra-C₁-C₂₀ alkyl-substitutedquaternary ammonium salt, a conventional betaine, a conventionalsulfobetaine, a polyglycol of the formula H—(—OCH₂CH₂—)_(a)—OH (where2≦a≦4), a polyether of the formula R³—(—OCH₂CH₂—)_(a)—OR⁴ (where R³ andR⁴ are independently a C₁-C₄ alkyl group), a C₄-C₂₀ branched orunbranched, saturated or unsaturated aliphatic carboxylic acid ester ofa C₁-C₄ alcohol or of the alcohols described in the above paragraph, aC₄-C₂₀ aliphatic carboxylic acid thioester of a C₁-C₄ thiol or of thethiols described above, a tri-C₁-C₂₀ alkyl- or triaryl-substitutedphosphine (such as trimethyl phosphine, triethyl phosphine, or triphenylphosphine), a tri-C₁-C₂₀ alkyl- or triaryl-substituted phosphate, adi-C₁-C₂₀ alkyl- or diaryl-substituted phosphate salt, an aryl or C₄-C₂₀branched or unbranched, saturated or unsaturated aliphatic sulfonicacid, an aryl or C₄-C₂₀ branched or unbranched, saturated or unsaturatedaliphatic sulfonate, a di-C₁-C₂₀ alkyl sulfate, a C₁-C₂₀ alkyl sulfatesalt, a ketone of the formula R⁵(C═O)R⁶ (where R⁵ and R⁶ areindependently a C₁-C₂₀ alkyl or C₆-C₁₀ aryl group), and/or aconventional silicone. Surfactants are a preferred additive whenhydrogen- and/or halogen-passivated nanoparticles are used, as they mayfacilitate or enable dispersion of such nanoparticles into aproticand/or relatively nonpolar solvents.

In a preferred embodiment, the passivated semiconductor nanoparticlescomprise alkyl-terminated silicon nanoparticles. The alkyl-terminatedsilicon nanoparticles can be prepared by reacting conventionalhydrogen-terminated silicon nanoparticles (e.g., as isolated from anetch step as described in U.S. Pat. No. 7,078,276, entitled“Nanoparticles and Method for Making the Same”) with an alkene(conventionally known as a “hydrosilylation reaction”). Morespecifically, alkenes suitable for use in the present hydrosilylationreaction include C₄-C₂₀ branched or unbranched alkenes, such as1-hexene, 4-methylpentene, 3,3-dimethylbutene, 1-octene, 1-decene,1-dodecene, 1-tetradecene, 1-hexadecene, 1-octadecene, 1-eicosene, andcombinations thereof. Polyunsaturated alkenes, such as long-chainalkadienes (e.g., 1,17-octadecadiene), in an amount of, e.g., 1-10 mol %may cross-link two or more silicon nanoparticles. In a sufficiently highconcentration in the alkene mixture, long-chain alkadienes may provide across-linked matrix of alkyl-passivated silicon nanoparticles in thepresent hydrosilylation reaction. The alkyl-terminated siliconnanoparticles produced by this reaction have a direct, covalent Si—Cbond between the outermost silicon atoms and the alkyl groups of thepassivation layer. The alkyl termination improves the nanoparticles'solubility in apolar or nonpolar organic solvents, such as C₆-C₂₀branched or unbranched alkanes, C₁-C₆ branched or unbranched alkanessubstituted with one or more halogens, C₆-C₂₀ branched or unbranchedalkenes, C₂-C₆ branched or unbranched alkenes substituted with one ormore halogens, C₅-C₂₀ branched or unbranched cyclic alkanes and alkenes,C₅-C₂₀ branched or unbranched cyclic alkanes and alkenes substitutedwith one or more halogens, C₆-C₁₀ arenes, C₆-C₁₀ arenes substituted withone or more C₁-C₆ branched or unbranched alkyl groups and/or halogens, adi-C₁-C₁₀ alkyl ether (but in the case where one of the alkyl groups ismethyl, the other comprises at least a C₄ alkyl group), and/or a C₄-C₁₀cyclic alkyl ether (such as tetrahydrofuran or dioxane).

In a further embodiment, the passivated semiconductor nanoparticlesand/or the silicon nanoparticles have an average diameter of less than 5nm, preferably less than 4 nm, more preferably about or less than 3.5nm. Alternatively, the passivated semiconductor nanoparticles and/or thesilicon nanoparticles may have a size distribution range such that atleast 90% (preferably, at least 95% and more preferably, at least 98%)of the nanoparticles have a diameter of from 0.1 nm to 10 nm, preferablyfrom 0.2 nm to 5 nm, more preferably from 0.5 nm to less than 5 nm. The(average) diameter may be for the passivated nanoparticles, butpreferably, it is an (average) particle diameter of the unpassivatedsemiconductor nanoparticle core.

Exemplary Inks

In another aspect, the present invention concerns an ink for printing asemiconductor and/or semiconducting thin film. The ink may comprise orconsist essentially of the exemplary composition described above. Wherethe ink consists essentially of the above composition, the compounds ofthe formulas (1) and/or (2) also function as a solvent for thepassivated semiconductor nanoparticles. Alternatively, the ink mayinclude, for example, the exemplary composition described above and asolvent in which the composition is soluble. In such an embodiment, thepassivated semiconductor nanoparticles, and the first cyclic Group IVAcompound and/or second cyclic Group IVA compound may each be present inthe ink in a percentage by weight of from 0.1% to 50%, more preferablyfrom 0.5 to 30 wt. %, and even more preferably from 1.0 to 20 wt. %.Furthermore, in any ink formulation, the ratio by weight of passivatedsemiconductor nanoparticles to the first and second cyclic Group IVAcompounds may range from 0.01% to 99.9%, preferably from 0.1% to 90%,more preferably from 1.0% to 75%, and even more preferably from 10% to50%.

In further embodiments, the solvent in the present ink comprises anaprotic solvent and/or an apolar solvent. In the context of the presentinvention, an “apolar” solvent is one that may have a gas-phase dipolemoment of about 2 debyes or less, preferably about 1 debye or less, andeven more preferably about 0.5 debye or less. In many implementations,an apolar solvent has a dipole moment of about 0 debyes, due to itsmolecular symmetry (e.g., carbon tetrachloride, tetrachloroethylene,benzene, p-xylene, dioxane) or highly covalent nature of the chemicalbonds therein (e.g., mineral spirits, hexane, cyclohexane, toluene). Insome embodiments, the present ink comprises a solvent having a boilingpoint of about or less than 250° C., preferably about or less than 200°C., and more preferably about or less than 150° C., at atmosphericpressure.

Exemplary solvents for the present ink composition include alkanes(e.g., C₅-C₁₂ branched or unbranched alkanes and cycloalkanes), alkenes(e.g., C₆-C₁₂ branched or unbranched alkenes and cycloalkenes),halogenated alkanes (e.g., C₁-C₄ alkanes having from 1 to 2n+2 halogensubstituents and C₃-C₆ cycloalkanes having from 1 to 2n halogensubstituents such as fluorine, chlorine and/or bromine, where n is thenumber of carbon atoms; preferably C₁-C₂ alkanes having from 2 to 2n+2fluorine and/or chlorine substituents), halogenated alkenes (e.g., C₂-C₄alkenes having from 1 to 2n halogen substituents and C₃-C₆ cycloalkeneshaving from 1 to 2n−2 halogen substituents such as fluorine, chlorineand/or bromine, where n is the number of carbon atoms; preferably C₂-C₃alkenes having from 2 to 2n fluorine and/or chlorine substituents),arenes (e.g., benzene), substituted arenes (e.g., N-methylpyrrole orC₆-C₁₀ arenes having from 1 to 8 halogen substituents and/or C₁-C₄ alkyland/or alkoxy substituents; preferably benzenes having from 1 to 6fluorine, chlorine, C₁-C₂ alkyl and/or methoxy substituents), aliphaticethers (e.g., ethers having two C₂-C₆ branched or unbranched alkylgroups, or 1 methyl group and one C₄-C₆ branched or unbranched alkylgroup), cyclic ethers (e.g., tetrahydrofuran or dioxane), glycol ethers(e.g., of the formula (CH₃(CH₂)_(w))O((CH₂)_(x)O)_(y)(CH₂)_(z)CH₃),where x is independently 2-4 [preferably 2], y is 1-4 [preferably 1 or2], and w and z are independently 0 to 3 [preferably 0]), and aliphaticesters (e.g., C₁-C₆ branched or unbranched alkyl esters of a C₂-C₂₀branched or unbranched, saturated or unsaturated aliphatic acid), andpolar aprotic solvents (such as aliphatic sulfoxides; e.g.,dimethylsulfoxide).

The present ink may further comprise a surface tension reducing agent, awetting agent, a surfactant, a binder and/or a thickening agent,although no such additives are required. In fact, it is advantageous forthe ink to exclude such additional components, particularly where suchadditional components include sufficiently high molar proportions ofelements such as carbon, oxygen, sulphur, nitrogen, halogen or heavymetals to significantly adversely affect electrical properties of theprinted thin film. However, where they are present, each of theseadditional components may be present in trace amounts in the present inkcomposition. However, the surface tension reducing agent, which isconventional, may be present in an amount of from 0.01 wt. % to 1 wt. %,preferably 0.02 wt. % to 0.1 wt. % of the ink composition. In certainembodiments, the surface tension reducing agent may comprise aconventional hydrocarbon surfactant, a conventional fluorocarbonsurfactant or a mixture thereof. The wetting agent is generally presentin an amount of from 0.05 wt. % to 1 wt. %, preferably 0.1 wt. % to 0.5wt. % of the ink composition. In certain embodiments, the wetting agentcomprises a fluorinated surfactant and/or a fluorinated hydrocarbon, asdescribed in U.S. Pat. No. 7,078,276, entitled “Nanoparticles and Methodfor Making the Same.” The surfactant, which may be selected from thosedescribed above for the passivation layer, may be present in an amountof from 0.01 wt. % to 1 wt. %, preferably 0.05 wt. % to 0.5 wt. % of theink composition. The binder and/or thickening agent, each of which isconventional, may be present in an amount sufficient to provide the inkcomposition with predetermined flow properties at a given processingtemperature. However, typical amounts of these components in thecomposition are from 0.01 wt. % to 10 wt. %, preferably 0.1 wt. % to 5wt. %

Exemplary Methods of Printing a Patterned Semiconductor Thin Film

The present invention further relates to method of making a patternedsemiconductor and/or semiconducting film, comprising the steps of: (a)printing a composition comprising first and second cyclic Group IVAcompounds of the formulas (1) and (2) above, and (b) curing thecomposition to form the patterned semiconducting film. In preferredembodiments, the composition further comprises semiconductornanoparticles, more preferably passivated semiconductor nanoparticles.In certain implementations, the semiconductor nanoparticles comprisesilicon nanoparticles.

The printing step in the present method may comprise nearly any knownprinting method. For example, printing may be conducted by embossing,which generally comprises the substeps of (i) depositing a liquid layerof the composition on the substrate, and (ii) embossing the liquidlayer. More specifically, as shown in FIG. 1A, a substrate 10 maycomprise a semiconductor (preferably, silicon) wafer with atwo-dimensional array of fields 12 a-12 z thereon. Alternatively, asshown in FIG. 1B, a substrate 20 may comprise a transparent ortranslucent display window 20 with a two-dimensional array of fields 22a-22 z thereon. The fields may correspond, for example, to a circuit, acircuit element, an integrated circuit or a circuit block within anintegrated circuit. While square or rectangular fields are shown inFIGS. 1A-1B to maximize the potential surface area for printingpatterned structures, a field may take any shape amenable to a“step-and-repeat” printing process. In certain embodiments, thesubstrate may comprise a transparent glass or plastic display window(e.g., substrate 20 in FIG. 1B), and the circuit, circuit element,integrated circuit or block thereof may comprise a thin film transistor(TFT) display element. Alternatively, the substrate may comprise asilicon wafer (e.g., substrate 10 in FIG. 1A), and the circuit, circuitelement, integrated circuit or block thereof may comprise a radiofrequency identification circuit (e.g., a so-called RF ID tag ordevice).

Liquid embossing is suitable for patterning the present compositionand/or ink particularly when an appropriate stamp material is chosen(see, e.g., U.S. patent application Ser. No. 10/251,103, filed Sep. 20,2002, and entitled “Methods for Patterning Using Liquid Embossing”; U.S.patent application Ser. No. 10/288,357, filed Nov. 4, 2002, and entitled“Controlled Print Methods”; and U.S. patent application Ser. No.10/288,359, filed Nov. 4, 2002, and entitled “Controlled Print Methods”,each of which is incorporated herein by reference). Other liquiddeposition and/or patterning techniques are also applicable, such asink-jet printing, screen printing, gravure printing, offset lithography,flexographic printing, spin-coating, dip-coating, spray-coating, etc.Once the composition and/or ink coats the substrate, other techniquesfor patterning the composition and/or ink may include laser writing,exposure to UV light through a patterned mask, etc. Also, traditionalphotolithography and etching can be used on the present semiconductorthin films deposited from passivated semiconductor nanoparticles and/orone or more of the cyclic Group IVA compounds of the formulas (1) and(2) described above. The only requirement for the present printing stepis that deposition, patterning and curing take place in an inert orreducing atmosphere.

As shown in part in FIG. 2A, the embossing substep may comprisecontacting a stamp 14 with the layer 16 in one or more fields on thesubstrate 10/20, then repeating the contacting step in one or moredifferent or next fields on the substrate, preferably until all fieldsin which the pattern is to be formed have been contacted with the stamp14. In general, stamp 14 has features 18 a-18 c therein corresponding tothe pattern, a partial cross section of which is shown in FIG. 2B andwhich comprises patterned structures 20 a-20 c. Patterned structures 20a-20 c are generally the structures resulting from the contacting step.

FIG. 3 shows an exemplary top view of the patterned structures 20 a-20 cformed from the contacting step. Such structures may form a transistorgate 22 and a pad 24. Transistor gate 22 may have a first transistorsource/drain terminal 26 and a second transistor source/drain terminal28 on opposing sides thereof, relative to a long axis of the gate.Transistor source/drain terminals 26 and 28 (which may also be formed bythe present printing and curing steps) are generally formed in anearlier step of an overall process for making thin film transistors(TFTs). Gate dielectric and field dielectric structures (not shown) maybe formed in conventional locations according to conventional techniquesor by a printing technique. Pad 24 may comprise an appropriate locationfor formation of a via or contact to an overlying layer of metallization(which may be subsequently formed by conventional methods or by thepresent printing and curing steps).

As shown in FIG. 4, the present process may be used to form acomplementary CMOS transistor pair 30 a, 30 b or 30 c. For example,complementary CMOS transistor pair 30 a comprises a PMOS transistor 32and an NMOS transistor 34, each of which respectively includes gate 36and 38, first source/drain terminal 40 and 42, and second source/drainterminal 44 and 46. The transistors in FIG. 4 omit the pad 24.

Each source/drain terminal, each gate and each transistor channel beloweach gate and between a corresponding set of first and secondsource/drain terminals are doped with a conventional dopant element, ata conventional doping level and/or in a conventional dopingamount/concentration. However, in such a structure, q is at least 1, Ror R′ in at least part of the cyclic Group IVA compound of the formula(2) is BH_(s)R″_(2-s), PH_(s)R″_(2-s), and/or AsH_(s)R″_(2-s) (where sand R″ are as described above), or the composition further comprises acompound of the formula (ZH_(u)R_(3-u))_(k), where Z is selected fromthe group consisting of B, P and As, u is an integer of from 0 to 3, kis 1 or 2, and R is as described above. Preferably R is R″, morepreferably H or AH₃. Preferably, u is 0 or 3, more preferably 3. Oneskilled in the art is easily able to determine and/or calculate themolar and/or weight percentages and/or amounts of passivatedsemiconductor nanoparticles and the first and second cyclic Group IVAcompounds that provide conventional doping levels. However, relative toconventionally doped semiconductor thin films, the present dopedsemiconductor thin film may have a uniform dopant distribution and/or adopant concentration gradient. In other words, the dopant concentrationas a function of the depth of the film can be constant or can varyaccording to a desired profile.

The printing step in the present method may alternatively comprise thesubsteps of depositing a layer 16 of the composition on the substrate 10or 20, selectively irradiating portions of the layer with light having awavelength and/or intensity sufficient to oligomerize or polymerizethose portions of the composition, and subsequently removingnon-irradiated portions of the layer with a suitable solvent to form thepattern. The substep of selectively irradiating the composition layermay comprise (i) positioning at least one of the substrate and a masksuch that the portions of the composition that will form the patternedstructures can be selectively irradiated, and the non-irradiatedportions (i.e., corresponding to the areas of the layer to be removed)cannot be irradiated, then (ii) irradiating the layer with ultravioletlight through the mask. The mask, which is conventional, is generallyone that absorbs light of a wavelength or wavelength range used for theirradiating substep.

Preferred UV radiation sources include those with an emission at 254 nm(e.g., a conventional handheld UV-lamp, an Hg lamp, etc.), as are knownin the art. In one embodiment, a patterned semiconductor film can begenerated by irradiating the uncured film of the cyclic Group IVAcompounds/nanoparticle composition with UV light through a mask,converting the irradiated cyclic Group IVA compounds to an insolublepolymer, and leaving the non-irradiated cyclic Group IVA compoundsessentially unchanged. On developing this layer with a suitable solvent(see the cleaning step below), the unexposed areas will be washed away,whereas the exposed areas remain relatively intact.

In such embodiments of the present method, the depositing substep maycomprise spin coating a solution, emulsion or suspension of thecomposition on the substrate. Furthermore, the printing step may furthercomprise the substep of aligning the mask to an alignment mark on thesubstrate or aligning the stamp to an alignment structure in a printingapparatus. Further detailed description of exemplary stamps and printingapparatus using such stamps can be found in U.S. patent application Ser.Nos. 10/251,103, 10/288,357 and 10/288,359, and a detailed descriptionof an exemplary alignment structure and method using such a stamp can befound in U.S. patent application Ser. No. 10/171,745, filed Jun. 13,2002 and entitled “Method of and Apparatus for Aligning a PrintingElement to a Substrate”, each of which is incorporated herein byreference in its entirety.

In a further alternative, and as shown in co-pending U.S. patentapplication Ser. No. 10/007,122, the printing step may comprisepositioning a stencil on or over the substrate, and depositing apatterned layer of the composition in a solvent through the stencil ontothe substrate. A detailed description of exemplary stencils, andprinting apparatus and methods using such stencils, can be found in U.S.patent application Ser. No. 10/007,122, filed Dec. 4, 2001 and entitled“Micro Stencil”, which is incorporated herein by reference in itsentirety. Also, the printing step may comprise inkjet printing thecomposition in a solvent in the pattern onto the substrate, inaccordance with conventional inkjet printing techniques.

Typically, curing times may vary from 10 seconds to 60 minutes(preferably 30 seconds to 30 minutes) depending on the appliedtemperature and the desired film characteristics (e.g., impurity level,density or extent of densification, level or percentage ofcrystallinity, doping levels, doping profile, etc.) The curing step inthe present method may comprise (i) drying the composition and thesubstrate, and/or (ii) heating the composition. In certainimplementations, the curing step further comprises (a) placing thesubstrate into a chamber, and evacuating the chamber; (b) passing aninert or reducing gas into the chamber; (c) removing solvent from thecomposition (see, e.g., U.S. patent application Ser. Nos. 10/288,357 and10/288,359, incorporated herein by reference in their entireties); (d)irradiating the composition to immobilize the printed layer; and/or (e)heating the patterned composition. Preferably, the present printingmethod comprises an irradiating step, which may avoid a subsequentdeveloping step since the printing step already provides a patternedfilm.

The curing step may comprise a “polysilane” formation phase or step, anda nanoparticle sintering phase or step. The term “polysilane” is used asa convenient notation for any polymer of silane, germane, or combinationthereof, as is contemplated by the present invention. Conversion of themixture of first and second cyclic Group IVA compounds to form a dopedor undoped polysilane, polygermane, poly(germa)silane orpoly(sila)germane generally occurs at a temperature around or above 100°C. in the absence of an additional initiator. A conventional radicalinitiator, such as 2,2′-azobisisobutyronitrile (AIBN),1,1′-azobiscyclohexanecarbonnitrile, dibenzoylperoxide, butyl lithium,silyl potassium or hexamethyldisilane (and others) may lower thetemperature for polysilane formation to below 100° C. Other methods tocatalyze the formation of polysilanes from the first and second cyclicGroup IVA compounds include adding known transition metal complexes suchas cyclopentadienyl complexes of early transition metals such as Ti andV (and known derivatives thereof). The amount of radical initiator addedcan vary from 0.00001 mol % to 10 mol % with respect to the first cyclicGroup IVA compound.

Sintering of the passivated semiconductor nanoparticles generally occursat a temperature above 200° C., more preferably above 300° C., and mostpreferably above 400° C. To lower the sintering temperature, averageparticle sizes below 10 nm are preferred, more preferably below 5 nm, asdescribed above. Such small nanoparticles may lower the effectivesintering temperature range to below 300° C. In the present composition,the low polysilane formation temperature may also fix the nanoparticles(or, alternatively, render the embedded nanoparticles insoluble) at atemperature at which no significant sintering occurs.

As mentioned above, curing (polymer formation and/or sintering)preferably takes place in an inert or reducing atmosphere. Suitableinert atmospheres may include one or more oxygen-free inert gases, suchas nitrogen and the noble gases (He, Ne, Ar, Kr, Xe). Reducingatmospheres generally comprise a reducing gas (such as hydrogen,methane, ammonia, phosphine, silane, germane, or a mixture thereof) or amixture of one or more reducing gasses with one or more inert gasses.

Preferred curing conditions for films formed from compositionscomprising alkyl-capped silicon nanoparticles and/or cyclic Group IVAcompounds of the formula (s) (1) and/or (2) include curing at 400° C. orhigher and in the presence of a reducing atmosphere such as anArgon/Hydrogen mixture. Such conditions are believed to remove hydrogenand carbon-containing species from the film effectively and/or at asuitable rate. However, in such a case, subsequent lower-temperatureannealing of a silicon film formed from such cured compositions maydramatically improve the film's electrical characteristics. Thelower-temperature annealing is generally conducted in a reducingatmosphere (preferably in an argon-hydrogen mixture, more preferablycontaining ≦10% H₂ by weight or moles, and in one implementation, 5 wt.% H₂), at a temperature in the range of from 250° C. to 400° C.,preferably from about 300° C. to about 350° C., for a length of time offrom 1 to 120 minutes, preferably from about 10 to about 60 minutes, andin one implementation about 30 minutes.

After curing or sintering, the method may further comprise cleaning thesubstrate with the patterned semiconductor thin film thereon, forexample to remove uncured ink. This step may comprise rinsing with orimmersing the substrate in a solvent, draining the solvent from thesubstrate, and drying the substrate and patterned semiconductor thinfilm. Solvent rinsing or washing may include the same procedure(s) asare typically used in photoresist development and/or photoresist etching(e.g., rinsing, immersing, spraying, vapor condensation, etc.).Preferred solvents include solvents in which the unsinterednanoparticles and unpolymerized cyclic Group IVA compounds have a highsolubility, such as the hydrocarbons and ethers described above for theexemplary ink solvent.

In preferred embodiments, the pattern comprises a two-dimensional arrayof lines having a width of from 100 nm to 100 μm, preferably from 0.5 μmto 50 μm, and more preferably from 1 μm to 20 μm. For example, as shownin FIG. 3, the lines may comprise a first set of parallel lines along afirst axis, and a second set of parallel lines along a second axisperpendicular to the first axis. Although parallel and perpendicularlines are shown (in part to minimize adverse effects from and/ormaximize the predictability of the effect of electromagnetic fields fromadjacent lines), lines may take any shape and/or take any course thatcan be designed and printed.

The lines may have an inter-line spacing of from 100 nm to 100 μm,preferably 200 nm to 50 μm, more preferably 500 nm to 10 μm.Furthermore, at least a subset of the lines may have a length of from 1μm to 5000 μm, preferably 2 μm to 2000 μm, more preferably 5 μm to 1000μm, and a thickness of from 0.001 μm to 1000 μm, preferably 0.01 μm to500 μm, more preferably 0.05 μm to 250 μm.

In an alternative embodiment, the method comprises (i) at leastpartially curing a thin film composition comprising semiconductornanoparticles to form a semiconductor thin film lattice, (ii) coatingthe semiconductor thin film lattice with a composition comprising atleast one cyclic Group IVA compound of the formula (1) and/or theformula (2) above, and (iii) curing the coated thin film lattice to forma semiconducting thin film. In preferred embodiments, (i) thecomposition comprises both of the first and second cyclic Group IVAcompounds, and/or (ii) the semiconductor nanoparticles comprisepassivated semiconductor nanoparticles or silicon nanoparticles (morepreferably passivated silicon nanoparticles as described above).

In general, individual steps in this alternative process (e.g.,printing, depositing, coating, curing, etc.) may be performed asdescribed above for the first exemplary method. For example, thisalternative process may comprise the steps of: (a) printing a firstcomposition comprising semiconductor nanoparticles, (b) at leastpartially curing the first composition to form a patterned semiconductorthin film lattice, (c) printing or depositing a second compositioncomprising at least one cyclic Group IVA compound of the formula (1)and/or the formula (2) on at least the patterned semiconductor thin filmlattice to form a coated thin film lattice, and (d) curing the coatedthin film lattice to form a patterned semiconducting thin film. When thesecond composition is deposited non-selectively on the patternedsemiconductor thin film lattice and any underlying substrate (e.g., byspin coating, vapor deposition, or another coating process that forms acontinuous layer), one may remove cured cyclic Group IVA compound(s) byconventional isotropic (directional) etching. Alternatively, one mayremove uncured cyclic Group IVA compound(s) by conventional developingtechniques (e.g., solvent-based removal as described above), as long asone allows or promotes absorption, incorporation and/or intercalation ofthe Group IVA compound(s) into the semiconductor thin film lattice(e.g., by coating the thin film lattice under a vacuum, such as about200 mTorr or less, preferably about 100 mTorr or less, and/or exposingthe coated thin film lattice to a pressure greater than atmosphericpressure, such as 3-4 atm or more, preferably 5 atm or more; or simplyallowing the coated composition to sit under an inert or reducingatmosphere for a length of time sufficient to at least partially fillspaces in the lattice). However, this alternative method is not limitedto producing a printed or patterned composition, which is then cured toproduce a printed or patterned semiconducting thin film. Rather, thisalternative method may be advantageously utilized in combination withsubsequent processing by conventional lithography, which may providefiner line widths, inter-line or inter-feature spacings and/or reducedfilm thicknesses. For example, in a further embodiment, the method maycomprise irradiating the Group IVA compound(s) with ultraviolet lightduring the coating (preferably, spin coating) step.

In a further alternative, the method comprises (i) at least partiallycuring a thin film composition comprising at least one cyclic Group IVAcompound of the formula (1) and/or the formula (2), (ii) coating the(partially) cured thin film composition with an ink comprisingsemiconductor nanoparticles, and (iii) curing the coated, (partially)cured thin film composition to form a semiconducting thin film.Preferably, in this embodiment, the thin film composition is fully curedto form a hydrogenated, at least partially amorphous Group IVA element(as described above), and the thin film composition and the ink may beprinted or uniformly coated onto the substrate and processed byconventional photolithography. This alternative method may improveinterface quality to the gate dielectric in a bottom gate TFT.

In more detailed embodiments, the semiconductor nanoparticles are atleast partially cured when heated to a temperature and/or for a lengthof time sufficient to remove passivation and begin forming covalentbonds between nanoparticles. Such heating is generally conducted underan inert or reducing atmosphere (as described above), and may take placeunder a vacuum (e.g., less than or about 100 Torr, preferably less thanor about 10 Torr, more preferably less than or about 1 Torr) or in aflow of inert or reducing gas. More generally, the semiconductornanoparticles are cured by sintering under conditions such as thosedescribed above for the exemplary compositions to form the semiconductorthin film lattice. For example, sintering may comprise heating thesemiconductor nanoparticles composition to a temperature of at leastabout 200° C., preferably at least about 300° C. A similar process (anddiscussion) applies to curing the coated semiconductor thin film latticeto form the semiconducting thin film (e.g., curing step (c) comprisessintering).

The method may further comprise patterning the semiconductor and/orsemiconducting thin film, largely by conventional photolithography.Thus, the method may further comprise the substeps of depositing a layerof photoresist on the semiconducting thin film (preferably by one of thedepositing techniques described above), selectively irradiating portionsof the photoresist, removing desired portions of the photoresist (eitherirradiated or non-irradiated, depending on the type of photoresist), andremoving exposed portions of the semiconductor and/or semiconductingthin film to form a patterned semiconducting thin film.

Exemplary Semiconducting Thin Film Structures

A further aspect of the invention relates to a semiconducting thin filmstructure comprising a pattern of semiconducting material on asubstrate, the semiconducting material comprising a sintered mixture ofsemiconductor nanoparticles in a hydrogenated, at least partiallyamorphous Group IVA element, the Group IVA element comprising at leastone of silicon and germanium, the semiconducting material havingimproved conductivity, density, adhesion and/or carrier mobilityrelative to an otherwise identical structure made by an identicalprocess, but without either the passivated semiconductor nanoparticlesor the mixture of first and second cyclic Group IVA compounds. Mixingsemiconductor nanocrystals with first and/or second cyclic Group IVAcompounds of the formulas (1) and (2) helps to densify the semiconductorthin film, thereby reducing the amount or density of “traps” in thefilm. This may lower the curing temperature required to obtain a certainfilm performance (e.g., conductivity, adhesion, carrier mobility, etc.),or a certain desired or predetermined value for a particular filmparameter (e.g., density, surface roughness, etc.). In either case, whenused to form a TFT, the present composition may increase the carriermobility as well as the transistor stability. The first and/or secondcyclic Group IVA compounds of the formulas (1) and (2) may also helpimprove the quality of the thin film interface to adjacent oxide, forexample by improving planarization of the semiconductor thin film.Improved adherence to an underlying substrate may also be provided,possibly by increasing the surface area of the film that makes chemicaland/or physical contact with the underlying substrate.

Doping of the semiconductor thin film by mixing nanoparticles with acyclic Group IVA compound containing a conventional dopant element maybe facilitated by the tendency of the nanoparticles to grow and sinterduring curing. The presence of a dopant bound to Group IVA atoms duringthis process may improve the probability that dopant atoms getincorporated into the silicon lattice during the nanoparticles' growthand/or densification. The covalent bond between dopant atom and GroupIVA atom may also alleviate any need for recrystallization-basedactivation of the dopant, as often occurs in conventional implantationprocesses.

In the present thin film structure, the semiconductor nanoparticlespreferably comprise silicon nanoparticles, and the hydrogenated (atleast partially) amorphous Group IVA element preferably comprisesamorphous silicon. As described above, the semiconductor/siliconnanoparticles may be passivated with alcoholate, thiolate, hydrogen,halogen, alkyl groups, etc. When passivated with alkyl groups, thesemiconductor/silicon nanoparticles may be more soluble in a nonpolarand/or aprotic solvent than are otherwise identicalsemiconductor/silicon nanoparticles passivated with a surfactant.

Also, either or both of the nanoparticles and the hydrogenated amorphousGroup IVA element may further comprise a dopant (e.g., B, P or As)covalently bound to Group IVA atoms. In such a case, the dopantconcentration profile or gradient may be substantially uniformthroughout the entire thickness of the semiconductor thin film. However,in the case where the hydrogenated amorphous Group IVA element furthercomprises a dopant but the semiconductor nanoparticles do not, thesintered thin film may comprise small crystalline phases or regions(preferably less than about 5 nm average diameter, more preferably lessthan about 3.5 nm average diameter) that are substantially free ofdopant, but are embedded in a matrix of uniformly doped semiconductingmaterial.

In another embodiment, the sintered thin film may have a controlleddoping profile; for example, it comprises multiple layers of differentlydoped silicon. In one embodiment, a bottom layer may comprise one ofp-doped silicon (i.e., where the composition comprises a compound of theformula (2) in which q is at least 1 and Z is B) or n-doped silicon(i.e., where the composition comprises a compound of the formula (2) inwhich q is at least 1 and Z is P or As), a second layer thereon maycomprise the other of p-doped silicon or n-doped silicon, an optionalthird layer on the second layer that comprises silicon having the samedopant type (p-doped or n-doped) as the bottom layer, in which thedopant may be present in the same, a higher or a lower concentrationthan the bottom layer, an optional fourth layer on the third layer thatcomprises silicon having the same dopant type (p-doped or n-doped) asthe second layer, in which the dopant may be present in the same, ahigher or a lower concentration than the second layer, and so on.Alternatively, the sintered thin film may comprise lightly doped silicon(i.e., where the composition comprises a compound of the formula (2) inwhich q is at least 1, in an amount or percentage by weight or molessufficient to provide, e.g., from 10⁻¹⁰ to 10⁻⁷ moles of dopant per moleof Group IVA element) and a layer or region of heavily doped silicon(e.g., where the compound of the formula (2) in which q is at least 1 ispresent in an amount or percentage by weight or moles sufficient toprovide, e.g., from 10⁻⁷ to 10⁻⁴ moles of dopant per mole of Group IVAelement) of the same dopant type. Such a structure may further comprise(i) a layer or region of oppositely doped silicon above it, below itand/or adjacent to it, and/or (ii) a layer or region of very heavilydoped silicon (e.g., where the compound of the formula (2) in which q isat least 1 is present in an amount or percentage by weight or molessufficient to provide, e.g., from 10⁻⁴ to 10⁻³ moles of dopant per moleof silicon) above it and/or adjacent to it.

In a further embodiment, the semiconducting thin film may comprise oneor more layers in a thin film transistor (TFT). In yet anotherembodiment, the semiconducting thin film may be used for a photovoltaicdevice. For instance, a photovoltaic device may be made by the aboveprocess, but with a film thicknesses of from 1 to 1000 microns,preferably 5 to 500 microns, whereas the preferred thickness for a TFTis from 10 to 500 nm, more preferably 50-100 nm.

The pattern of the present thin film structure has been described inpart above with regard to the present method. However, in a preferredembodiment, the present thin film structure pattern comprises atwo-dimensional array of lines having a width of from 100 nm to 100 μm,more preferably from 0.5 μm to 50 μm, and even more preferably from 1 μmto 20 μm. The lines may have an inter-line spacing of from 100 nm to 100μm, preferably from 0.5 μm to 50 μm, more preferably from 1 μm to 20 μm.The thin film pattern lines may also have a length of from 1 μm to 5000μm, at least a subset of the lines preferably having a length of from 2μm to 1000 μm, more preferably from 5 μm to 500 μm. The lines may have athickness of from 0.001 μm to 1000 μm, preferably from 0.005 μm to 500μm, more preferably from 0.05 μm to 100 μm.

CONCLUSION Summary

Thus, the present invention provides a patterned semiconducting thinfilm structure and a composition, ink and method for makingsemiconductor and/or semiconducting thin films. It is also envisionedthat the present composition and method can be used for other thin filmstructures, such as corresponding oxides of Group IVA elements (e.g.,silicon dioxide). For example, a polysilane precursor (e.g., where A=Si)may be well suited as a precursor for silicon oxide as a gatedielectric. In this application, one may deposit the present composition(with or without the passivated nanoparticles, and preferably without),curing it in an oxidizing atmosphere (see below) or converting it to anamorphous and/or crystalline silicon film as described above andoxidizing subsequently. Means of oxidation include exposure to air,molecular oxygen in an inert gas carrier, water vapor, ozone, etc., inaccordance with known techniques.

The foregoing descriptions of specific embodiments of the presentinvention have been presented for purposes of illustration anddescription. They are not intended to be exhaustive or to limit theinvention to the precise forms disclosed, and obviously manymodifications and variations are possible in light of the aboveteaching. The embodiments were chosen and described in order to bestexplain the principles of the invention and its practical application,to thereby enable others skilled in the art to best utilize theinvention and various embodiments with various modifications as aresuited to the particular use contemplated. It is intended that the scopeof the invention be defined by the Claims appended hereto and theirequivalents.

1. A method of making passivated semiconductor nanoparticles,comprising: a) reacting hydrogen-terminated semiconductor nanoparticleswith a compound containing one or more unsaturated carbon-carbon bond(s)to form said passivated semiconductor nanoparticles; and b) isolatingsaid passivated semiconductor nanoparticles.
 2. The method of claim 1,wherein said hydrogen-terminated semiconductor nanoparticles compriseone or more crystalline region(s) and/or phase(s).
 3. The method ofclaim 2, wherein said hydrogen-terminated semiconductor nanoparticlesfurther comprise one or more amorphous region(s) and/or phase(s).
 4. Themethod of claim 1, wherein said hydrogen-terminated semiconductornanoparticles comprise silicon and/or germanium.
 5. The method of claim4, wherein said hydrogen-terminated semiconductor nanoparticles furthercomprise a dopant.
 6. The method of claim 1, wherein said compoundcontaining one or more unsaturated carbon-carbon bond(s) includes acarbon-carbon double bond.
 7. The method of claim 6, wherein saidcompound including a carbon-carbon bond double bond comprises one ormore compound(s) selected from the group consisting of polyunsaturatedalkenes.
 8. The method of claim 7, wherein said polyunsaturated alkenecomprises an alkadiene.
 9. The method of claim 7, wherein saidpolyunsaturated alkene is present in an amount of from about 1 to 10 mol%.
 10. The method of claim 1, wherein said compound containing one ormore unsaturated carbon-carbon bond(s) includes one or more compound(s)selected from the group consisting of C₄-C₂₀ branched or unbranchedalkenes.
 11. The method of claim 1, wherein said compound comprises anunsaturated alcohol.
 12. The method of claim 1, wherein said passivatedsemiconductor nanoparticles have an average diameter of less than 5 nm.13. The method of claim 12, wherein said passivated semiconductornanoparticles have an average diameter of less than 4 nm.
 14. The methodof claim 13, wherein said passivated semiconductor nanoparticles have anaverage diameter of less than 3.5 nm.
 15. The method of claim 1, whereinsaid passivated semiconductor nanoparticles have a size distributionrange such that at least 90% of the passivated silicon nanoparticleshave a diameter of from 0.1 nm to 10 nm.
 16. The method of claim 15,wherein said passivated semiconductor nanoparticles have a diameter offrom 0.2 nm to 5 nm.
 17. The method of claim 16, wherein said passivatedsemiconductor nanoparticles have a diameter of from 0.5 nm to 5 nm. 18.The method of claim 15, wherein at least 95% of the passivated siliconnanoparticles have a diameter of from 0.1 nm to 10 nm.
 19. The method ofclaim 18, wherein at least 98% of the passivated silicon nanoparticleshave a diameter of from 0.1 nm to 10 nm.
 20. The method of claim 1,wherein said passivated semiconductor nanoparticles comprise solublepassivated semiconductor nanoparticles.
 21. The method of claim 1,wherein said passivated semiconductor nanoparticles consist essentiallyof silicon and a passivation layer consisting essentially of saidcompound.